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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLF404 UHF power MOS transistor
Product specification Supersedes data of 1997 Oct 28 1998 Jan 29
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES * High power gain * Easy power control * Gold metallization * Good thermal stability * Withstands full load mismatch * Designed for broadband operation. APPLICATIONS
handbook, halfpage
BLF404
PINNING PIN 1, 8 2, 3 4, 5 6, 7 source gate source drain DESCRIPTION
8
5
* Communication transmitters in the VHF/UHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap.
1 Top view 4
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA RF performance at Tmb 60 C in a common source test circuit. MODE OF OPERATION CW class-AB f (MHz) 500 VDS (V) 12.5 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PL (W) 4 Gp (dB) 10 D (%) 50
1998 Jan 29
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature Tmb 85 C CONDITIONS - - - - -65 - MIN.
BLF404
MAX. 40 20 1.5 8.3 150 200 V V A W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base CONDITIONS Tmb 85 C, Ptot = 8.3 W VALUE 12.1 UNIT K/W
MGM522
handbook, halfpage
10
ID (A)
1
(1)
(2)
10-1 1 10 VDS (V)
102
(1) Current in this area may be limited by RDSon. (2) Tmb = 85 C.
Fig.2 DC SOAR.
1998 Jan 29
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGS(th) IDSS IGSS IDSX RDSon gfs Cis Cos Crs PARAMETER gate-source threshold voltage drain-source leakage current gate-source leakage current on-state drain current forward transconductance input capacitance output capacitance feedback capacitance CONDITIONS ID = 50 mA; VDS = 10 V VGS = 0; VDS = 12.5 V VDS = 0; VGS = 20 V VGS = 15 V; VDS = 10 V ID = 0.7 A; VDS = 10 V VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz 2 - - - - 200 - - - MIN. 40 - - - - 2.3 1.8 270 14 17 3 TYP.
BLF404
MAX. - 4.5 0.5 1 - 2.7 - - - -
UNIT V V mA A A mS pF pF pF
drain-source breakdown voltage VGS = 0; ID = 5 mA
drain-source on-state resistance ID = 0.7 A; VGS = 15 V
handbook, halfpage
25
MRA254
handbook, halfpage
3
MRA249
T.C. (mV/K)
ID (A) 2
15
5
1
-5 10
102
103 ID(mA)
104
0
0
4
8
12
16 20 VGS (V)
VDS = 10 V. VDS = 10 V; Tj = 25 C.
Fig.3
Temperature coefficient of gate-source voltage as a function of drain current; typical values.
Fig.4
Drain current as a function of gate-source voltage; typical values.
1998 Jan 29
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
handbook, halfpage
5
MRA253
MRA246
handbook, halfpage
50
RDSon () 4
C (pF) 40
3
30
2
20
Cos
1
10
Cis
0
0
50
100
Tj (oC)
150
0
0
4
8
12 VDS (V)
16
ID = 0.7 A; VGS = 15 V. VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.5
Drain-source on-state resistance as a function of junction temperature; typical values.
Fig.6
Input and output capacitance as functions of drain-source voltage; typical values.
handbook, halfpage
10 Crs (pF) 8
MRA256
6
4
2
0 0 4 8 12 VDS (V) 16
VGS = 0; f = 1 MHz; Tj = 25 C.
Fig.7
Feedback capacitance as a function of drain-source voltage; typical values.
1998 Jan 29
5
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
APPLICATION INFORMATION RF performance at Tmb 60 C in a common source test circuit with the device soldered on a printed-circuit board with through metallized holes. MODE OF OPERATION CW, class-AB f (MHz) 500 VDS (V) 12.5 IDQ (A) 50 PL (W) 4 Gp (dB) 10 typ. 11.5 Ruggedness in class-AB operation The BLF404 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: f = 500 MHz; VDS = 12.5 V; PL = 4 W; Tmb 60 C. D (%) 50 typ. 55
MGM520
handbook, halfpage
20
Gp (dB)
100 D (%) 80 D
handbook, halfpage
6
MGM521
16
PL (W) 4
12
60
Gp 8 40 2 4 20
0 0 2 4 PL (W) 6
0
0 0 200 400 PD (mW) 600
CW, class-AB operation; f = 500 MHz; VDS = 12.5 V; IDQ = 50 mA; Tmb 60 C.
CW, class-AB operation; f = 500 MHz; VDS = 12.5 V; IDQ = 50 mA; Tmb 60 C.
Fig.8
Power gain and drain efficiency as functions of load power; typical values.
Fig.9
Load power as a function of drive power; typical values.
1998 Jan 29
6
Philips Semiconductors
Product specification
UHF power MOS transistor
Test circuit information
BLF404
handbook, full pagewidth
+VD
R3
R1
R2
R4
L1 C1
R6 C2 R5
L2
C3 C10 L8 L4 L9 C11 L10 L11
output 50
input 50
C5 L5 C6 C4 C7 C8 L6 L3 L7 DUT
C9
C12
C13
MGM523
Fig.10 Class-AB common source test circuit at f = 500 MHz.
1998 Jan 29
7
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components used in test circuit (see Figs 10 and 11). COMPONENT C1 C2, C3 C4 C5, C10 C6, C11 C7 C8 C9 C12 C13 L1 DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 2 turns 1 mm enamelled copper wire on a grade 4B1 Ferroxcube core 3 turns 1 mm enamelled copper wire bifilar coil bifilar coil stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 SMD resistor metal film resistor metal film resistor metal film resistor potentiometer 50 50 50 50 50 50 50 3.9 k 1 k, 0.25 W 22 , 0.25 W 10 k, 0.25 W 10 k VALUE 4.7 F, 10 V 47 nF 18 pF 180 pF 270 pF 22 pF 8.2 pF 2.7 pF 1.2 pF 12 pF ext. dia. = 4.2 mm int. dia. = 2 mm length = 6 mm int. dia. = 4.6 mm leads = 2 x 5 mm lead dia. = 0.8 mm lead dia. = 1 mm 8.8 x 2.38 mm 5.8 x 2.38 mm 6.8 x 2.38 mm 3.76 x 2.38 mm 5.8 x 2.38 mm 4.48 x 2.38 mm 3.13 x 2.38 mm DIMENSIONS
BLF404
CATALOGUE No.
L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 R1, R2 R3 R4 R5 R6 Notes
1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed circuit board, with DUROID dielectric (r = 2.2); thickness 0.79 mm, thickness of the copper sheet 2 x 35 m.
1998 Jan 29
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
handbook, full pagewidth
56
31
2 3 R6 R1 R2 R3 C2 R5 L2 C5 L5 C6 C4 C7 C8 L6 L3 L7 L4 L8 L9 C11 C9 C12 C13 C10 L10 L11 BLF404 L1 R4 C3 1 +VD
C1
MGM524
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.11 Printed-circuit board and component layout for 500 MHz class-AB test circuit in Fig.10.
1998 Jan 29
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
MGM517
MGM518
handbook, halfpage
8
0 xi () -20
handbook, halfpage
16
ri () 6
xi
ZL () 12
4
-40
8 RL
2 ri
-60
4
XL
0 0 200 400 f (MHz)
-80 600
0 0 200 400 f (MHz) 600
CW, class-AB operation; VDS = 12.5 V; ID = 50 mA; PL = 4 W; Tmb 60 C.
CW, class-AB operation; VDS = 12.5 V; ID = 50 mA; PL = 4 W; Tmb 60 C.
Fig.12 Input impedance as a function of frequency (series components); typical values.
Fig.13 Load impedance as a function of frequency (series components); typical values.
MGM519
handbook, halfpage
30
Gp (dB) 20
10
0 0 200 400 f (MHz) 600
CW, class-AB operation; VDS = 12.5 V; IDQ = 50 mA; PL = 4 W; Tmb 60 C.
Fig.14 Power gain as a function of frequency (series components); typical values.
1998 Jan 29
10
Philips Semiconductors
Product specification
UHF power MOS transistor
MOUNTING RECOMMENDATIONS
BLF404
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12 (0.5 mm diameter) through metallized holes filled with solder. A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted on the printed-circuit board.
full pagewidth
1.87 (2x)
0.60 (4x)
0.80 (2x)
0.50 (12x) 7.38 3.60 1.00 (8x)
1.00 (9x) 4.60
MGK390
Dimensions in mm.
Fig.15 Reflow soldering footprint for SOT409A.
1998 Jan 29
11
Philips Semiconductors
Product specification
UHF power MOS transistor
PACKAGE OUTLINE Ceramic surface mounted package; 8 leads
BLF404
SOT409A
D
A
D2
B
H1 8 5
w2 B L
c
H
E2
E
A 1 e b 4 w1
Q1
0
2.5 scale
5 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.36 2.06 0.093 0.081 b 0.58 0.43 0.023 0.017 c 0.23 0.18 0.009 0.007 D 5.94 5.03 0.234 0.198 D2 5.16 5.00 0.203 0.197 E 4.93 4.01 0.194 0.158 E2 4.14 3.99 0.163 0.157 e 1.27 0.050 H 7.47 7.26 0.294 0.286 H1 4.39 4.24 0.173 0.167 L 1.02 0.51 0.040 0.020 Q1 0.10 0.00 0.004 0.000 w1 0.25 0.010 w2 0.25 0.010
7 0 7 0
OUTLINE VERSION SOT409A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-01-27
1998 Jan 29
12
Philips Semiconductors
Product specification
UHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF404
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Jan 29
13
Philips Semiconductors
Product specification
UHF power MOS transistor
NOTES
BLF404
1998 Jan 29
14
Philips Semiconductors
Product specification
UHF power MOS transistor
NOTES
BLF404
1998 Jan 29
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
Internet: http://www.semiconductors.philips.com
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/03/pp16
Date of release: 1998 Jan 29
Document order number:
9397 750 03239

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